GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GalnP: Fe regrowth
2000 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 36, no 18, 1542-1544 p.Article in journal (Refereed) Published
The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GaInP:Fe around 15 mu m diameter and 8 mu m tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Under room temperature continuous wave (CW) operation. the device exhibited a threshold current of 3.5mA, a differential quantum efficency of 33% and a light output power of 4.2mW. CW operation at temperatures up to 97 degrees C is also demonstrated.
Place, publisher, year, edition, pages
2000. Vol. 36, no 18, 1542-1544 p.
IdentifiersURN: urn:nbn:se:kth:diva-20069ISI: 000089641700020OAI: oai:DiVA.org:kth-20069DiVA: diva2:338762
QC 201005252010-08-102010-08-10Bibliographically approved