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GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser with semi-insulating GalnP: Fe regrowth
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2000 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 36, no 18, 1542-1544 p.Article in journal (Refereed) Published
Abstract [en]

The authors report the first results of a GaAs/AlGaAs buried-heterostructure vertical-cavity surface-emitting laser (VCSEL) with semi-insulating Ga0.51In0.49P:Fe (SI-GaInP:Fe) as the burying layer. Regrowth of SI-GaInP:Fe around 15 mu m diameter and 8 mu m tall VCSEL mesas was carried out by hydride vapour phase epitaxy (HVPE). Under room temperature continuous wave (CW) operation. the device exhibited a threshold current of 3.5mA, a differential quantum efficency of 33% and a light output power of 4.2mW. CW operation at temperatures up to 97 degrees C is also demonstrated.

Place, publisher, year, edition, pages
2000. Vol. 36, no 18, 1542-1544 p.
Identifiers
URN: urn:nbn:se:kth:diva-20069ISI: 000089641700020OAI: oai:DiVA.org:kth-20069DiVA: diva2:338762
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Lourdudoss, Sebastian

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