Analysis of regrowth evolution around VCSEL type mesas
2000 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 219, no 3, 185-192 p.Article in journal (Refereed) Published
Morphological evolution during hydride vapour phase epitaxial regrowth of InP around vertical cavity surface emitting laser type mesas is studied by varying the input InCl partial pressure. The various emerging planes, indices of which are orientation dependent, have been identified and their growth rates measured. The nature of the emerging planes depends on whether (111)A or (111)B plane is formed initially: further growth relies heavily on how well (111)A or (111)B can collaborate with (001) surface. This is explained in terms of crystallographic structure together with the dangling bond approach. Equal planarisation on the orthogonal directions is feasible at lower InCl partial pressures.
Place, publisher, year, edition, pages
2000. Vol. 219, no 3, 185-192 p.
selective epitaxy, regrowth, InP, vapour phase epitaxy, VCSEL, inp
IdentifiersURN: urn:nbn:se:kth:diva-20109ISI: 000089923500001OAI: oai:DiVA.org:kth-20109DiVA: diva2:338802
QC 201005252010-08-102010-08-10Bibliographically approved