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Oxidation of Ce on Si(111) studied by high-resolution photoelectron spectroscopy
KTH, Superseded Departments, Materials Science and Engineering.
2000 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 464, no 03-feb, 117-122 p.Article in journal (Refereed) Published
Abstract [en]

The Si(lll)-Ce (2x2) surface was studied by photoelectron spectroscopy during oxidation and annealing. Detailed analysis of the Si 2p core-level spectra and the Ce valence band levels shows that Ce is first oxidised and then promotes oxidation of Si at room temperature by improving the oxygen uptake of the surface. Initially, no oxidation of Si can be recorded, but at exposures of 3 L O-2 or more, SiOx and higher silicon oxides are formed. After annealing to 750 degreesC, a temperature that is generally used to oxidise Si, almost all O leaves the surface. At 1045 degreesC, the Si 2p and the Ce valence band spectra of the sample show almost the same shape as for the original Si(lll)-Ce 2x2 surface. This means that oxidation/reduction of the Si(lll)-Ce 2x2 surface is reversible.

Place, publisher, year, edition, pages
2000. Vol. 464, no 03-feb, 117-122 p.
Keyword [en]
cerium, oxidation, photoelectron spectroscopy, silicon, pulsed-laser deposition, interface, overlayers, films, photoemission, surface, yb
Identifiers
URN: urn:nbn:se:kth:diva-20128ISI: 000090098000014OAI: oai:DiVA.org:kth-20128DiVA: diva2:338821
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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