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Ferroelectric and colossal magnetoresistive properties of a PbZr1-xTixO3/La1-xSrxMnO3 heterostructure film
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2000 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 39, no 9B, 5418-5420 p.Article in journal (Refereed) Published
Abstract [en]

We report the ferroelectric and magnetoresistive properties and crystallization of a PbZr0.52Ti0.48O3 (PZT)/La0.8Sr0.2MnO3 (LSMO) heterostructure film prepared by pulsed-laser deposition on a MgO(100) single crystal substrate. Ferroelectric properties such as the hysteresis loop and dielectric constant of the Au/PZT/LSMO capacitor were compared with those of the Au/PZT/YBa2Cu3O7-x, (YBCO) superconductor heterostructure film. The resistivity of the LSMO film was as low as that of the YBCO film at room temperature. The fabricated Au/PZT/LSMO capacitor had a remanent polarization of 29 muC/cm(2), a coercive field of 30 kV/cm and a dielectric constant of about 1000.

Place, publisher, year, edition, pages
2000. Vol. 39, no 9B, 5418-5420 p.
Keyword [en]
PZT, LSMO, ferroelectrics, colossal magnetoresistance, heterostructure, pulsed-laser deposition, thin-films
URN: urn:nbn:se:kth:diva-20132ISI: 000090138900012OAI: diva2:338825
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Grishin, Alexander M.
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Microelectronics and Information Technology, IMIT
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