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Influence of transient enhanced diffusion of the intrinsic base dopant profile on SiGeHBT DC and HF characteristics
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2000 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 44, no 10, 1747-1752 p.Article in journal (Refereed) Published
Abstract [en]

The influence of transient enhanced boron out-diffusion from the intrinsic base, caused by excess silicon interstitials created during the extrinsic base implantation, has been investigated for a non-selective SiGe HBT process. Devices with different designs of the extrinsic base region were fabricated, where some designs allowed part of the epitaxial base to be implanted with a high boron dose, hereby increasing the number of silicon interstitials close to the intrinsic device. These devices showed a marked degradation of DC characteristics and HF performance. 2D-device simulations were used to investigate the sensitivity in DC and HF parameters to vertical base profile changes. Good agreement was obtained between measured and simulated DC and HF characteristics.

Place, publisher, year, edition, pages
2000. Vol. 44, no 10, 1747-1752 p.
Keyword [en]
silicon-germanium HBT, base design, transient enhanced diffusion (TED), ion-implantation, device simulation, heterojunction bipolar-transistors, extrinsic base, hbts, performance, simulation, transport
URN: urn:nbn:se:kth:diva-20136ISI: 000165065100006OAI: diva2:338829
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Malm, B. GunnarÖstling, Mikael
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