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Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2000 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 40, no 11, 1863-1867 p.Article in journal (Refereed) Published
Abstract [en]

The effect of hydrogen passivation by forming gas annealing (FGA) on the bipolar junction transistor low frequency noise was investigated. The results demonstrated a reduced 1/f noise component by a factor of five after FGA, which resulted in a reduced corner frequency. An equivalent input noise spectral density (S-IB) dependence on base current (IB) of S-IB similar to I-B(2) and on emitter area (A(E)) of S-IB similar to A(E)(-1) was observed, both before and after FGA. The interpretations of the results were (a) the 1/f noise was due to carrier number fluctuation, (b) the noise sources were homogeneously distributed over the polysilicon/monosilicon emitter interfacial oxide, and

Place, publisher, year, edition, pages
2000. Vol. 40, no 11, 1863-1867 p.
Keyword [en]
junction transistors, base current, 1/f noise, dopant, vlsi
Identifiers
URN: urn:nbn:se:kth:diva-20138ISI: 000165074800014OAI: oai:DiVA.org:kth-20138DiVA: diva2:338831
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Malm, B. Gunnar

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