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Coulomb blockade effects in anodically oxidized titanium wires
KTH, Superseded Departments, Physics.ORCID iD: 0000-0001-8534-6577
2000 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 88, no 11, 6549-6553 p.Article in journal (Refereed) Published
Abstract [en]

We investigate the electrical transport properties of narrow titanium (Ti) wires which are anodically oxidized through a resist mask. At temperatures below 1.2 K the current-voltage characteristics of the resulting Ti/TiOx nanostructures exhibit a zero-current state, characteristic of the Coulomb blockade. The blockade region can be modulated by a capacitively coupled gate electrode. The observed experimental features can be explained in terms of a single electron tunneling model of a multi-island device.

Place, publisher, year, edition, pages
2000. Vol. 88, no 11, 6549-6553 p.
Keyword [en]
single-electron transistors, tunnel-junctions, fabrication, operation, system
URN: urn:nbn:se:kth:diva-20182ISI: 000165543200062OAI: diva2:338875
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Haviland, David B.
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