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Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N-2 ambient
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2000 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 29, no 12, 1398-1401 p.Article in journal (Refereed) Published
Abstract [en]

We have investigated the growth of quaternary In1-xGaxAsyP1-y/InP materials using TEA and TBP in a N-2 ambient. This process improves significantly the uniformity of In1-xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H-2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H-2 and N-2 is evaluated. Advantages with the TBA/TBP/N-2 process are discussed.

Place, publisher, year, edition, pages
2000. Vol. 29, no 12, 1398-1401 p.
Keyword [en]
TBA, TBP, alternative V-sources, OMVPE, MOCVD, nitrogen, vapor-phase epitaxy, large-area, atmosphere
Identifiers
URN: urn:nbn:se:kth:diva-20190ISI: 000165646100008OAI: oai:DiVA.org:kth-20190DiVA: diva2:338883
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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