Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N-2 ambient
2000 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 29, no 12, 1398-1401 p.Article in journal (Refereed) Published
We have investigated the growth of quaternary In1-xGaxAsyP1-y/InP materials using TEA and TBP in a N-2 ambient. This process improves significantly the uniformity of In1-xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H-2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H-2 and N-2 is evaluated. Advantages with the TBA/TBP/N-2 process are discussed.
Place, publisher, year, edition, pages
2000. Vol. 29, no 12, 1398-1401 p.
TBA, TBP, alternative V-sources, OMVPE, MOCVD, nitrogen, vapor-phase epitaxy, large-area, atmosphere
IdentifiersURN: urn:nbn:se:kth:diva-20190ISI: 000165646100008OAI: oai:DiVA.org:kth-20190DiVA: diva2:338883
QC 201005252010-08-102010-08-10Bibliographically approved