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Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient
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2000 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 39, no 11, 6162-6165 p.Article in journal (Refereed) Published
Abstract [en]

A process for growth of heterostructure bipolar transistors (HBT) using tertiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient is realised, which is compatible with a high temperature overgrowth, thus suitable for the vertical integration Of a laser structure on top of an HBT. A high growth temperature for the C-InGaAs base is favourable, to ensure no: degradation during subsequent growth. Increasing the growth temperature after the base from 500 degreesC to 680 degreesC within the emitter layer instead of at the base-emitter interface was found to improve the ideality factors, the de gain and the turn-on voltage.

Place, publisher, year, edition, pages
2000. Vol. 39, no 11, 6162-6165 p.
Keyword [en]
GaInAs : C, metalorganic-VPE, carbon, nitrogen, CBr4, HBT, TBA, TBP, passivation, annealing, integration, OEIC, MOCVD, molecular-beam epitaxy, carrier gas, hbts, gaas, deposition, mocvd, performance, fabrication, precursors, hydrogen
Identifiers
URN: urn:nbn:se:kth:diva-20216ISI: 000165831400010OAI: oai:DiVA.org:kth-20216DiVA: diva2:338909
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Landgren, Gunnar.
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Microelectronics and Information Technology, IMIT
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