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Self-interstitial migration during ion irradiation of boron delta-doped silicon
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
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2000 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 3, no 4, 279-283 p.Article in journal (Refereed) Published
Abstract [en]

Boron delta layers in silicon, grown by molecular beam epitaxy and characterized by the secondary ion mass spectrometry, have been employed to investigate the migration of silicon self-interstitials during irradiation with MeV protons in the 500-850 degreesC temperature range. After growth, the samples were thinned from the backside to a thickness that made them transparent for the proton energies used. As a result, the generation rate of point defects can be considered as essentially uniform throughout the samples. However: the evolution of the boron profiles is almost identical to that observed after injection of self-interstitials caused by thermal oxidation of the samples at elevated temperature. This strongly indicates that the surface acts as a reflective boundary for the migrating self-interstitials or/ and an efficient sink for mobile vacancies. Furthermore, higher value of interstitial supersaturation in the near-surface region in proton-irradiated samples is consistent with experimentally detected depth dependence for immobile fraction in boron clusters. Then, activation energy of boron mobilization, (0.9 +/- 0.4) eV, was attributed to the dissociation of boron clusters.

Place, publisher, year, edition, pages
2000. Vol. 3, no 4, 279-283 p.
Keyword [en]
boron, silicon, proton irradiation, enhanced diffusion, clustering, point-defects, enhanced diffusion, dopant diffusion, si
Identifiers
URN: urn:nbn:se:kth:diva-20236ISI: 000165954500008OAI: oai:DiVA.org:kth-20236DiVA: diva2:338929
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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