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Pseudodonor nature of the D-I defect in 4H-SiC
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 1, 46-48 p.Article in journal (Refereed) Published
Abstract [en]

We use the recent findings about the pseudodonor character of the D-I defect to establish an energy-level scheme in the band gap for the defect, predicting the existence of a hole trap at about 0.35 eV above the valence band. Using minority carrier transient spectroscopy, we prove that the D-I defect indeed is correlated to such a hole trap. In addition, we show that the D-I defect is not correlated to the Z(1/2) electron trap, in contrast to what was previously reported.

Place, publisher, year, edition, pages
2001. Vol. 78, no 1, 46-48 p.
Keyword [en]
4h silicon-carbide, transient spectroscopy, radiation defects, epitaxial layers, photoluminescence, centers
URN: urn:nbn:se:kth:diva-20255ISI: 000166122000016OAI: diva2:338948
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hallén, Anders.
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Microelectronics and Information Technology, IMIT
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