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Differences between interfacial and surface molybdenum in the formation Of TiSi2
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 89, no 3, 1641-1646 p.Article in journal (Refereed) Published
Abstract [en]

Backscattering and diffraction results are presented for the effects of an interfacial or a surface Mo layer on the formation of Ti-silicides during solid-state interaction between Ti films and Si substrates. It is shown that the interfacial and surface Mo are fundamentally different in their involvement in the Ti-silicide formation. The interfacial Mo induces the formation of C40 (Mo,Ti)Si-2 at the interface adjacent to the Si substrate already after annealing at 550 degreesC, in agreement with our previous results. Hence, the desired C54 TiSi2 can grow directly on top of the C40 (Mo,Ti)Si-2 at relatively low temperatures as a result of the template effect. The surface Mo is, however, found in a metal-rich silicide presumably (Mo,Ti)(5)Si-3 at 550-600 degreesC, which eventually converts to (Mo,Ti)Si-2 upon annealing at higher temperatures. Underneath this metal-rich silicide lies a fully developed C49 TiSi2 layer. Consequently, the formation of C54 TiSi2 in the presence of surface Mo follows the usual path of the C49-C54 phase transition. This important difference in the participation of Mo in the silicide formation spreads doubts about the validity of using interfacial Mo versus surface Mo to study the dominant mechanism(s) responsible for the enhanced formation of C54 TiSi2.

Place, publisher, year, edition, pages
2001. Vol. 89, no 3, 1641-1646 p.
Keyword [en]
x-ray-diffraction, phase-transformation, c54 phase, polycrystalline silicon, interposed layer, temperature, resistivity, morphology, nucleation, mechanism
URN: urn:nbn:se:kth:diva-20320ISI: 000166644400016OAI: diva2:339015
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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