Carrier diffusion characterization in epitaxial 4H-SiC
2001 (English)In: Journal of Materials Research, ISSN 0884-2914, Vol. 16, no 2, 524-528 p.Article in journal (Refereed) Published
Carrier diffusivity has been experimentally determined in low-doped n-type epitaxial 4H-SiC over a wide injection range using a Fourier transient grating technique. The data showed that, with injection, the diffusion coefficient increased from a minority-hole diffusivity D-h = 2.3 cm(2)/s to an ambipolar diffusivity D-a = 4.2 cm(2)/s at approximately 10(16) cm(-3) with a substantial decrease occurring at higher injections. The derived D-h value corresponded to a minority-hole drift mobility of mu (h) = 90 cm(2)/Vs, about 30% lower than available majority-hole mobilities. Also. the temperature dependence of the ambipolar diffusivity in the 296-523 K range has been determined. It followed a power law D-a similar to T-1.3 which notably differed from the expected one using the majority-hole mobility temperature dependence.
Place, publisher, year, edition, pages
2001. Vol. 16, no 2, 524-528 p.
semiconductor, transport, silicon, layers
IdentifiersURN: urn:nbn:se:kth:diva-20332ISI: 000166775900028OAI: oai:DiVA.org:kth-20332DiVA: diva2:339027
QC 201005252010-08-102010-08-10Bibliographically approved