Proposal of an optical modulator based on resonant tunneling and intersubband transitions
2001 (English)In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, Vol. 37, no 2, 224-230 p.Article in journal (Refereed) Published
We propose and analyze an optical modulator based on intersubband transitions. The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the two states are tuned out of resonance, the electrons are rapidly evacuated by means of the optical held, A waveguide based on surface plasmons is assumed in order to have a high optical mode overlap. Calculations are performed for a cascaded structure with four periods, assuming InGaAs-InAlAs QWs, The considered modulator structure operates at lambda =6.0 mum and is RC limited to 27 GHz, An extinction ratio of it is obtained with a low applied voltage of 0.6 V, At larger applied voltages, the absorption is bistable, Absorption at shorter/longer wavelengths can be obtained by using materials with a larger/smaller conduction band offset. We also assess resonant tunneling from a 2-D electron gas reservoir into an array of quantum dots and compare it to the 2-D-2-D tunneling resonance.
Place, publisher, year, edition, pages
2001. Vol. 37, no 2, 224-230 p.
intersubband transitions, light modulators, mid-IR, quantum dots, quantum wells, resonant tunneling, quantum-wells, infrared modulator, nonparabolicity, spectroscopy, absorption, devices, shift, stark
IdentifiersURN: urn:nbn:se:kth:diva-20386ISI: 000167129200008OAI: oai:DiVA.org:kth-20386DiVA: diva2:339081
QC 201005252010-08-102010-08-10Bibliographically approved