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Proposal of an optical modulator based on resonant tunneling and intersubband transitions
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Physics.
2001 (English)In: IEEE Journal of Quantum Electronics, ISSN 0018-9197, Vol. 37, no 2, 224-230 p.Article in journal (Refereed) Published
Abstract [en]

We propose and analyze an optical modulator based on intersubband transitions. The absorption is modulated by modulating the carrier density in the ground state of a quantum well (QW). Electrons are injected resonantly into this subband from a QW reservoir subband through a single barrier. When the two states are tuned out of resonance, the electrons are rapidly evacuated by means of the optical held, A waveguide based on surface plasmons is assumed in order to have a high optical mode overlap. Calculations are performed for a cascaded structure with four periods, assuming InGaAs-InAlAs QWs, The considered modulator structure operates at lambda =6.0 mum and is RC limited to 27 GHz, An extinction ratio of it is obtained with a low applied voltage of 0.6 V, At larger applied voltages, the absorption is bistable, Absorption at shorter/longer wavelengths can be obtained by using materials with a larger/smaller conduction band offset. We also assess resonant tunneling from a 2-D electron gas reservoir into an array of quantum dots and compare it to the 2-D-2-D tunneling resonance.

Place, publisher, year, edition, pages
2001. Vol. 37, no 2, 224-230 p.
Keyword [en]
intersubband transitions, light modulators, mid-IR, quantum dots, quantum wells, resonant tunneling, quantum-wells, infrared modulator, nonparabolicity, spectroscopy, absorption, devices, shift, stark
URN: urn:nbn:se:kth:diva-20386ISI: 000167129200008OAI: diva2:339081
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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