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Ferroelectric Na0.5K0.5NbO3 thin films by pulsed laser deposition
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2000 (English)In: Integrated Ferroelectrics, ISSN 1058-4587, E-ISSN 1607-8489, Vol. 31, no 1-4, 35-45 p.Article in journal (Refereed) Published
Abstract [en]

Highly c-axis oriented single phase Na0.5K0.5NbO3 (NKN) thin films have been deposited onto polycrystalline Pt80Ir20 substrates and SiO2/Si(001) wafers using pulsed laser ablation of stoichiometric ceramic target. Strong self-assembling of NKN films along the [001] direction has been observed. Properties of NKN/Pt thin film structures have been successfully tailored by oxygen pressure control from the ferroelectric state, characterized by the remnant polarization of 12 muC/cm(2), dielectric constant epsilon similar to 520 and tan delta - 0.024 @ 100 kHz, to superparaelectric state with tan delta as low as 0.003 and epsilon = 210 with very small 1.7% dispersion in the frequency domain 0.4-100 kHz and less than 10% Variation in the temperature range 77-415 K. NKN films grown onto SiO2/Si(001) substrates show quadrupled super-lattice structure along c-axis, loss tan delta less than 0.01, and epsilon similar to 110 @ 1 MHz. C-V measure ments for Au/NKN(270nm)/SiO2/Si MFIS-diode structure yield memory window of 3.26 V at the programmable voltage of 8 V.

Place, publisher, year, edition, pages
2000. Vol. 31, no 1-4, 35-45 p.
Keyword [en]
preferential orientation, self-assembling, low loss, MFIS-diode, silicon
Identifiers
URN: urn:nbn:se:kth:diva-20445ISI: 000167524300005OAI: oai:DiVA.org:kth-20445DiVA: diva2:339140
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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