Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Evaluation of different oxidation methods for silicon for scanning capacitance microscopy
KTH, Superseded Departments, Electronics.
2001 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, Vol. 4, no 03-jan, 81-84 p.Article in journal (Refereed) Published
Abstract [en]

Different oxides, namely, native, thermal, and wet-chemical (H2SO4 + H2O2 based) oxides on Si are evaluated in the context of scanning capacitance microscopy (SCM). The samples investigated consisted of uniformly doped Si substrates and p-type epitaxial doping-staircase structures with concentrations ranging from 5 x 10(14) to 2 x 10(19) cm(-3) The bias for which the SCM signal (dC/dV) is maximised for the lowest doped region was used for comparing the different oxidation methods. It is shown that for a better evaluation of the surface oxide properties, it is essential to obtain dC/dV curves for a sufficiently large doping range. Best results in terms of low values of flat-band voltages (1 V), uniformity, and consistency across a large doping range were obtained for the wet-chemical oxide. For the native oxide case, the difference in the dC/dV peak bias Values obtained at regions doped to 5 x 10(14) to 10(17) cm(-3) was anomalously large and suggests appreciable distortion of the dC/dV curves. For the same oxidation procedure the full-width at half-maximum of the dC/dV curve obtained on the cleaved surface is typically 2 times larger than that on the planar (100) surface. It is most likely that interface states are responsible for the observed distortion.

Place, publisher, year, edition, pages
2001. Vol. 4, no 03-jan, 81-84 p.
Keyword [en]
SCM, Si, oxide, flat-band voltage
Identifiers
URN: urn:nbn:se:kth:diva-20481ISI: 000167727200019OAI: oai:DiVA.org:kth-20481DiVA: diva2:339176
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Anand, Srinivasan
By organisation
Electronics
In the same journal
Materials Science in Semiconductor Processing

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 26 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf