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DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 13, 1900-1902 p.Article in journal (Refereed) Published
Abstract [en]

Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices.

Place, publisher, year, edition, pages
2001. Vol. 78, no 13, 1900-1902 p.
Keyword [en]
microwave devices, capacitors, ferroelectrics, quality, films
Identifiers
URN: urn:nbn:se:kth:diva-20484ISI: 000167744000033OAI: oai:DiVA.org:kth-20484DiVA: diva2:339179
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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