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Low-temperature full wafer adhesive bonding
KTH, Superseded Departments, Signals, Sensors and Systems.ORCID iD: 0000-0002-0525-8647
KTH, Superseded Departments, Signals, Sensors and Systems.ORCID iD: 0000-0001-9552-4234
2001 (English)In: Journal of Micromechanics and Microengineering, ISSN 0960-1317, E-ISSN 1361-6439, Vol. 11, no 2, 100-107 p.Article in journal (Refereed) Published
Abstract [en]

We have systematically investigated the influence of different bonding parameters on void formation in a low-temperature adhesive bonding process. As a result of these studies we present guidelines for void free adhesive bonding of 10 cm diameter wafers. We have focused on polymer coatings with layer thicknesses between 1 mum and 18 mum. The tested polymer materials were benzocyclobutene (BCE) from Dow Chemical, a negative photoresist (ULTRA-i 300) and a positive photoresist (S1818) from Shipley, a polyimide (HTR3) from Arch Chemical and two different polyimides (PI2555 and PI2610) from DuPont. The polymer material, the banding pressure and the pre-curing time and temperature for the polymer significantly influence void formation at the bond interface. High bonding pressure and optimum pre-curing times/temperatures counteract void formation. We present the process parameters to achieve void-free bonding with the BCB coating and with the ULTRA-i 300 photoresist coating as adhesive materials. Excellent void-free and strong bonds have been achieved by using BCB as the bonding material which requires a minimum bonding temperature of 180 degreesC.

Place, publisher, year, edition, pages
2001. Vol. 11, no 2, 100-107 p.
URN: urn:nbn:se:kth:diva-20497DOI: 10.1088/0960-1317/11/2/303ISI: 000167833200003OAI: diva2:339192
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Niklaus, FrankStemme, Göran
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