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Electrical characterization of ruthenium-doped InP grown by low pressure hydride vapor phase epitaxy
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
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2001 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 4, no 6, G53-G55 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial layers of ruthenium-doped InP grown by low-pressure hydride vapor phase epitaxy have been studied. Current voltage measurements were conducted at temperatures between 20 and 200 degreesC for samples doped with Ru in the range 1 x 10(17) to 5 X 10(17) cm(-3). In this doping range, the specific resistivity of n(+)/InP:Ru/n(+) structures accommodating electron injection is less than or equal to1 x 10(4) Ohm cm and that of p(+)/InP:Ru/p(+) structures accommodating hole injection is as high as 3 x 10(10) Ohm cm. The reason for such a huge difference in the resistivity of these structures is attributed to a low activation of deep Ru acceptors, thus rather giving rise to an n(-) layer than a semi-insulating layer, as supported by our theoretical simulation. Analysis of the Arrhenius plots constructed from the temperature-dependent I-V curves yield an average activation energy of Ru with reference to the conduction band equal to 0.44 and 0.52 eV under electron and hole injection, respectively.

Place, publisher, year, edition, pages
2001. Vol. 4, no 6, G53-G55 p.
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URN: urn:nbn:se:kth:diva-20536ISI: 000168107000014OAI: oai:DiVA.org:kth-20536DiVA: diva2:339232
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QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Lourdudoss, Sebastian

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