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Material quality improvements for high voltage 4H-SiC diodes
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2001 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, Vol. 80, no 03-jan, 337-341 p.Article in journal (Refereed) Published
Abstract [en]

The influence of thin 4H-SiC buffer layers grown by liquid phase epitaxy (LPE) on structural quality of 4H-SiC low-doped epitaxial layers, grown by chemical vapor deposition (CVD) was investigated in detail. A dramatic defect density reduction in CVD epitaxial layers grown on commercial wafers with buffer LPE layer was detected. P(+)n junctions were formed on these CVD layers by high dose Al ion implantation followed by rapid thermal anneal. It was shown that both the increase of diffusion lengths of minority carriers (Lp) in CVD lavers and the forming of p(+)-layers after Al ion implantation and high temperature anneal lead to superior device characteristics.

Place, publisher, year, edition, pages
2001. Vol. 80, no 03-jan, 337-341 p.
Keyword [en]
silicon carbide, epitaxy, ion implantation, p-n junction
Identifiers
URN: urn:nbn:se:kth:diva-20549ISI: 000168260800075OAI: oai:DiVA.org:kth-20549DiVA: diva2:339245
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hallén, Anders.

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