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Influence of charged impurities on the surface phases of Sn/Ge(111)
KTH, Superseded Departments, Materials Science and Engineering.
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2001 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 477, no 03-feb, 227-234 p.Article in journal (Refereed) Published
Abstract [en]

The root3 alpha and 3 x 3 reconstructions on the Ge(111)-Sn surface have been perturbed by small amounts of iodine and potassium to test the spectral response in the course of a synchrotron radiation photoemission study. We demonstrate the inadequacy of the static model of the root3 alpha phase at room temperature and of the surface charge density wave model of the 3 x 3 phase at low temperature. Instead, the influence of the charged impurities is consistently explained when considering that dynamical fluctuations in the tin adatom positions are frozen in upon passing the phase transition temperature.

Place, publisher, year, edition, pages
2001. Vol. 477, no 03-feb, 227-234 p.
Keyword [en]
synchrotron radiation photoelectron spectroscopy, germanium, tin, iodine, alkali metals, low index single crystal surfaces, adatoms, scanning-tunneling-microscopy, density-wave transition, photoelectron-spectroscopy, ge(111) surfaces, sn, reconstructions, adsorption, distortion, interface, si(111)
Identifiers
URN: urn:nbn:se:kth:diva-20558ISI: 000168314500019OAI: oai:DiVA.org:kth-20558DiVA: diva2:339254
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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