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Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2001 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 22, no 5, 242-244 p.Article in journal (Refereed) Published
Abstract [en]

The variation of the low-frequency noise in polysilicon emitter bipolar junction transistors (BJTs) was investigated as a function of emitter area (A(E)) For individual BJTs with submicron-sized As, the low-frequency noise strongly deviated from a 1/f-dependence. The averaged noise varied as 1/f, with a magnitude proportional to A(E)(-1), while the variation in the noise level was found to vary as A(E)(-1.5). A new expression that takes into account this deviation is proposed for SPICE modeling of the the low-frequency noise, The traps responsible for the noise were located to the thin SiO2 interface between the polysilicon and monosilicon emitter, The trap's energy level, areal concentration and capture cross-section were estimated to 0.31 eV, 6 x 10(8) cm(-2) and 2 x 10(-19) cm(2), respectively.

Place, publisher, year, edition, pages
2001. Vol. 22, no 5, 242-244 p.
Keyword [en]
bipolar transistors, low-frequency noise, noise modeling, polysilicon emitter, semiconductor device noise, 1/f noise
Identifiers
URN: urn:nbn:se:kth:diva-20579ISI: 000168402100016OAI: oai:DiVA.org:kth-20579DiVA: diva2:339275
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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