Change search
ReferencesLink to record
Permanent link

Direct link
Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-8760-1137
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 19, 2908-2910 p.Article in journal (Refereed) Published
Abstract [en]

Ion implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found that the reduction of free carriers per ion-induced vacancy increases with increasing nitrogen content. Nitrogen is suggested to be deactivated through reaction with migrating point defects, and silicon vacancies or alternatively interstitials are proposed as the most likely candidates.

Place, publisher, year, edition, pages
2001. Vol. 78, no 19, 2908-2910 p.
Keyword [en]
silicon, vacancy
URN: urn:nbn:se:kth:diva-20584ISI: 000168437600031OAI: diva2:339280
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Hallén, Anders.
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Applied Physics Letters

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 49 hits
ReferencesLink to record
Permanent link

Direct link