Nitrogen deactivation by implantation-induced defects in 4H-SiC epitaxial layers
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 78, no 19, 2908-2910 p.Article in journal (Refereed) Published
Ion implantation causes free charge carrier reduction due to damage in the crystalline structure. Here, nitrogen-doped 4H silicon carbide (n type) epitaxial layers have been investigated using low ion doses in order to resolve the initial stage of the charge carrier reduction. It was found that the reduction of free carriers per ion-induced vacancy increases with increasing nitrogen content. Nitrogen is suggested to be deactivated through reaction with migrating point defects, and silicon vacancies or alternatively interstitials are proposed as the most likely candidates.
Place, publisher, year, edition, pages
2001. Vol. 78, no 19, 2908-2910 p.
IdentifiersURN: urn:nbn:se:kth:diva-20584ISI: 000168437600031OAI: oai:DiVA.org:kth-20584DiVA: diva2:339280
QC 201005252010-08-102010-08-10Bibliographically approved