Implanted collector profile optimization in a SiGeHBT process
2001 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 45, no 3, 399-404 p.Article in journal (Refereed) Published
Optimization of implanted collector doping profiles for a high-speed, low-voltage SiGe HBT process has been investigated experimentally and by device simulations. A low-energy antimony implantation has been combined with a standard selectively implanted collector using phosphorous, to achieve improved control of the collector doping profile. The simulations indicate that the narrow n-type doping peak formed by the antimony implantation allows the cut-off frequency f(T) to be increased without degrading the collector emitter breakdown voltage BVCEO. The fabricated devices demonstrate a highest f(T) of 60 GHz. Depending on the collector profile BVCEO values between 1.5 and 2 V were obtained.
Place, publisher, year, edition, pages
2001. Vol. 45, no 3, 399-404 p.
silicon-germanium HBT, selectively implanted collector (SIC), antimony implantation, device simulation, Johnson limit, bipolar-transistors, performance, hbts
IdentifiersURN: urn:nbn:se:kth:diva-20595ISI: 000168511700004OAI: oai:DiVA.org:kth-20595DiVA: diva2:339291
QC 201005252010-08-102010-08-10Bibliographically approved