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Temporally resolved selective area growth of InP in the openings off-oriented from 110 direction
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2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 225, no 1, 9-15 p.Article in journal (Refereed) Published
Abstract [en]

Temporally resolved selective area growth of InP on patterned substrates with openings off-oriented from [110] direction was studied by low pressure hydride vapour phase epitaxy system. Lateral overgrowth and vertical growth were analysed. The lateral growth rate was observed to be strongly dependent on the orientation of the openings. The maximum lateral growth rate was achieved when the openings oriented at 30 degrees and 60 degrees off [110] direction. The vertical growth rate was relatively constant, independent of the opening orientation. The growth behaviour of InP in openings aligned at low index directions was explained by dangling bond theory. A new phenomenon of inhomogeneous and orientation dependent dopant distribution within an overgrown layer was observed in stained cross-sections by SEM.

Place, publisher, year, edition, pages
2001. Vol. 225, no 1, 9-15 p.
Keyword [en]
dangling bond theory, hydride vapor phase epitaxy, selective epitaxy, epitaxial lateral overgrowth, semiconducting indium phosphide, si
URN: urn:nbn:se:kth:diva-20617ISI: 000168632100003OAI: diva2:339313
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Lourdudoss, Sebastian
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Microelectronics and Information Technology, IMIT
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