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Scanning mu-RBS characterisation of local loading effects of non-selectively epitaxially grown SiGe thin films
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
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2001 (English)In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, ISSN 0168-583X, E-ISSN 1872-9584, Vol. 179, no 1, 121-125 p.Article in journal (Refereed) Published
Abstract [en]

Scanning microbeam Rutherford backscattering spectrometry (mu -RBS) has been employed to investigate local loading effects of non-selective epitaxial growth (NSEG) of SiGe on Si in structures consisting of apertures in an SiO2 mask. The structure sizes were 22 mum x 22 mum. 42 mum x 42 mum, 82 mum x 82 mum and 500 mum x 2000 mum. From the measured thickness and Ge content, it was concluded that in NSEG local loading effects for the structure sizes used are small or absent.

Place, publisher, year, edition, pages
2001. Vol. 179, no 1, 121-125 p.
Keyword [en]
non-selective epitaxial growth, mu-RBS, local loading effects, PIXE, chemical-vapor-deposition, dependence, silicon
Identifiers
URN: urn:nbn:se:kth:diva-20655ISI: 000168905200017OAI: oai:DiVA.org:kth-20655DiVA: diva2:339351
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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