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Metal-nonmetal transition in p-type SiC polytypes
2001 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 6320, no 20Article in journal (Refereed) Published
Abstract [en]

The critical concentration for the metal-nonmetal transition has been calculated fur the polytypes 3C, 4H, and 6H of SiC, duped with Al, Ga, B, and Sc. Three different computational methods have been utilized: the first is Mott's original model, the second is an extended Mott-Hubbard model, and the third is based on the total energy of the metallic and nonmetallic phases. All three methods show similar results. For comparison, calculations fur p-type Ge and Si materials have also been performed.

Place, publisher, year, edition, pages
2001. Vol. 6320, no 20
Keyword [en]
transmutation-doped ge-70-ga, electrical-properties, insulator-transition, band-structure, n-type, silicon, semiconductors, shifts
URN: urn:nbn:se:kth:diva-20666ISI: 000168937200040OAI: diva2:339362
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Persson, ClasJohansson, Börje
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