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The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
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2001 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 45, no 5, 645-653 p.Article in journal (Refereed) Published
Abstract [en]

A full band Monte Carlo (MC) study of the high frequency performance of a 4H-SiC short channel vertical MESFET is presented. The MC model used is based on data from a full potential band structure calculation using the local density approximation to the density functional theory. The MC results have been compared with simulations using state of the art drift-diffusion and hydrodynamic transport models. Transport parameters such as mobility, saturation velocity and energy relaxation time are extracted from MC simulations.

Place, publisher, year, edition, pages
2001. Vol. 45, no 5, 645-653 p.
Keyword [en]
SiC, vertical MESFETs, device simulations, hexagonal sic polytypes
Identifiers
URN: urn:nbn:se:kth:diva-20724ISI: 000169397100004OAI: oai:DiVA.org:kth-20724DiVA: diva2:339420
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Persson, Clas

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