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Lateral base design rules for optimized low-frequency noise of differentially grown SiGe heterojunction bipolar transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6459-749X
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Microelectronics and reliability, ISSN 0026-2714, E-ISSN 1872-941X, Vol. 41, no 6, 881-886 p.Article in journal (Refereed) Published
Abstract [en]

The low-frequency noise dependence on lateral design parameters was investigated for SiGe heterojunction bipolar transistors fabricated by differential epitaxy. The low-frequency noise was found to vary substantially as a function of the extrinsic base design. The dominant noise sources were located either at the interface between the polycrystalline and epitaxial Si/SiGe base, in the epitaxial Si/SiGe base link region, in the base-emitter depletion region, or at the thin SiO2 interface layer between the polysilicon and monosilicon emitter. Boron was found to passivate interfacial traps, acting as low-frequency noise sources. Generation-recombination noise with a strong dependence on the lateral electrical field was observed for some of the designs.

Place, publisher, year, edition, pages
2001. Vol. 41, no 6, 881-886 p.
Keyword [en]
junction transistors, extrinsic base, 1/f noise, emitter, silicon, model
URN: urn:nbn:se:kth:diva-20733ISI: 000169464200013OAI: diva2:339430
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Malm, B. GunnarÖstling, Mikael
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