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Application of optical emission microscopy for reliability studies in 4H-SiC p(+)/n(-)/n(+) diodes
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
2001 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 90, no 2, 980-984 p.Article in journal (Refereed) Published
Abstract [en]

An optical emission microscopy technique with spatial and spectral resolution capabilities is applied for stability studies of 4H-SiC material properties. From the example of a 4H-SiC p(+)/n(-)/n(+) diode imaged at different stages of electrical overstress the mechanism of degrading performance is directly unveiled. We correlate this phenomenon with irreversible structural changes within the active region created by a nonuniform heating related stress. The stress-generated features are interpreted as multiple stacking faults spreading throughout the whole base region and nucleated in the vicinity of built-in defects and process-induced structural deficiencies.

Place, publisher, year, edition, pages
2001. Vol. 90, no 2, 980-984 p.
Keyword [en]
silicon-carbide, electron-microscopy, centers, boron
Identifiers
URN: urn:nbn:se:kth:diva-20755ISI: 000169660000066OAI: oai:DiVA.org:kth-20755DiVA: diva2:339452
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Linnros, Jan

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