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Dopant distribution in selectively regrown InP: Fe studied by time-resolved photoluminescence
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 226, no 4, 451-457 p.Article in journal (Refereed) Published
Abstract [en]

We apply time-resolved photoluminescence with 1 mum spatial resolution for the characterization of iron distribution in semi-insulating InP:Fe epitaxial layers regrown by hydride vapor-phase epitaxy around etched mesas. The InP:Fe regrowth was carried out on InP:S mesas etched both along the [110] and [110] crystallographic directions, as well as on InP/InGaAsP in-plane lasers. In all cases, the Fe concentration was found to be close to the target values and showed little variation along the regrown layers.

Place, publisher, year, edition, pages
2001. Vol. 226, no 4, 451-457 p.
Keyword [en]
time-resolved photoluminescence, computer simulation, hydride vapor phase epitaxy selective regrowth, semi-insulating InP : Fe, laser diode, spectroscopy, gaas
Identifiers
URN: urn:nbn:se:kth:diva-20765ISI: 000169714500003OAI: oai:DiVA.org:kth-20765DiVA: diva2:339462
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Marcinkevicius, SauliusLourdudoss, Sebastian

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