Dopant distribution in selectively regrown InP: Fe studied by time-resolved photoluminescence
2001 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 226, no 4, 451-457 p.Article in journal (Refereed) Published
We apply time-resolved photoluminescence with 1 mum spatial resolution for the characterization of iron distribution in semi-insulating InP:Fe epitaxial layers regrown by hydride vapor-phase epitaxy around etched mesas. The InP:Fe regrowth was carried out on InP:S mesas etched both along the  and  crystallographic directions, as well as on InP/InGaAsP in-plane lasers. In all cases, the Fe concentration was found to be close to the target values and showed little variation along the regrown layers.
Place, publisher, year, edition, pages
2001. Vol. 226, no 4, 451-457 p.
time-resolved photoluminescence, computer simulation, hydride vapor phase epitaxy selective regrowth, semi-insulating InP : Fe, laser diode, spectroscopy, gaas
IdentifiersURN: urn:nbn:se:kth:diva-20765ISI: 000169714500003OAI: oai:DiVA.org:kth-20765DiVA: diva2:339462
QC 201005252010-08-102010-08-10Bibliographically approved