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An integrating CMOS APS for X-ray imaging with an in-pixel preamplifier
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, Vol. 466, no 1, 232-236 p.Article in journal (Refereed) Published
Abstract [en]

We present in this paper an integrating CMOS Active Pixel Sensor (APS) circuit coated with scintillator type sensors for intra-oral dental X-ray imaging systems. The photosensing element in the pixel is formed by the p-diffusion on the n-well diode. The advantage of this photosensor is its very low direct absorption of X-rays compared to the other available photosensing elements in the CMOS pixel. The pixel features an integrating capacitor in the feedback loop of a preamplifier of a finite gain in order to increase the optical sensitivity. To verify the effectiveness of this in-pixel preamplification, a prototype 32 x 80 element CMOS active pixel array was implemented in a 0.8 mum CMOS double poly, n-well process with a pixel pitch of 50 mum. Measured results confirmed the improved optical sensitivity performance of the APS. Various measurements on device performance are presented.

Place, publisher, year, edition, pages
2001. Vol. 466, no 1, 232-236 p.
Keyword [en]
X-ray imaging, pixel detectors, readout electronics, CMOS APS, radiation imaging, photodiode, integrating pixel
Identifiers
URN: urn:nbn:se:kth:diva-20779ISI: 000169789200035OAI: oai:DiVA.org:kth-20779DiVA: diva2:339476
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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