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Studies on ruthenium-doped InP growth by low-pressure hydride vapor-phase epitaxy
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
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2001 (English)In: Journal of the Electrochemical Society, ISSN 0013-4651, E-ISSN 1945-7111, Vol. 148, no 7, G375-G378 p.Article in journal (Refereed) Published
Abstract [en]

Ruthenium-doped InP (InP:Ru) has been grown by low-pressure hydride vapor-phase epitaxy (LP-HVPE) using bis(eta (5)-2,4-dimethylpentadienyl)ruthenium(II) as precursor. Ruthenium concentrations in the range 2 x 10(15) to 2 x 10(18) cm(-3) have been achieved. The Ru incorporation has been studied in terms of incorporation flux, and it is shown that the growth rate limits: the incorporation rate. From current-voltage measurements on n-InP/InP:Ru/n-InP and p-InP/InP:Ru/p-InP structures, resistivities greater than 10(3) Omega cm and greater than 10(10) Omega cm have been obtained, respectively.

Place, publisher, year, edition, pages
2001. Vol. 148, no 7, G375-G378 p.
Identifiers
URN: urn:nbn:se:kth:diva-20800DOI: 10.1149/1-1374220ISI: 000169897300054OAI: oai:DiVA.org:kth-20800DiVA: diva2:339497
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Lourdudoss, Sebastian

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