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Unilateral power gain limitations due to dynamic base widening effects
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 22, no 8, 370-372 p.Article in journal (Refereed) Published
Abstract [en]

It is shown that the maximum frequency of oscillation of an InP-HBT may be limited by the low velocity of the holes when operated in the base push-out regime since modulation of the extended base will be delayed by the hole transit time, having an effect also on the electron current. The resulting delay of the current response causes a peaking of the unilateral power gain followed by a -40 dB/decade roll-off, being a source for a strong overestimation of the extrapolated cut-off frequency when neglected,An extended equivalent small-signal circuit is proposed that takes these effects into account.

Place, publisher, year, edition, pages
2001. Vol. 22, no 8, 370-372 p.
Keyword [en]
base push-out, HBT, high-frequency limitations, hole velocity, InP, delay
URN: urn:nbn:se:kth:diva-20821ISI: 000170050900004OAI: diva2:339518
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Willen, Bo G.
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