Change search
ReferencesLink to record
Permanent link

Direct link
High density plasma via hole etching in SiC
Show others and affiliations
2001 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 19, no 4, 1878-1881 p.Article in journal (Refereed) Published
Abstract [en]

Throughwafer vias up to 100 mum deep were formed in 4H-SiC substrates by inductively coupled plasma etching with SF6/O-2 at a controlled rate of similar to0.6 mum min(-1) and use of Al masks. Selectivities of > 50 for SiC over Al were achieved. Electrical (capacitance-voltage: current-voltage) and chemical (Auger electron spectroscopy) analysis techniques showed that the etching produced only minor changes in reverse breakdown voltage, Schottky barrier height, and near surface stoichiometry of the SiC and had high selectivity over common frontside metallization. The SiC etch rate was a strong function of the incident ion energy during plasma exposure. This process is attractive for power SiC transistors intended for high current, high temperature applications and also for SiC micromachining.

Place, publisher, year, edition, pages
2001. Vol. 19, no 4, 1878-1881 p.
Keyword [en]
silicon-carbide, power devices, low-damage, chemistries, mixtures
URN: urn:nbn:se:kth:diva-20827ISI: 000170111100061OAI: diva2:339524
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Zetterling, Carl-Mikael
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 16 hits
ReferencesLink to record
Permanent link

Direct link