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Highly sensitive triaxial silicon accelerometer with integrated PZT thin film detectors
KTH, Superseded Departments, Signals, Sensors and Systems.ORCID iD: 0000-0001-9552-4234
2001 (English)In: Sensors and Actuators A-Physical, ISSN 0924-4247, Vol. 92, no 03-jan, 156-160 p.Article in journal (Refereed) Published
Abstract [en]

This paper reports the first micromachined triaxial single-mass accelerometer with integrated piezoelectric thin film detectors. In addition, the design has a much higher sensitivity than previously presented approaches and is significantly smaller. The keystones of the performance are the use of the highly sensitive PZT material and the deep reactive ion etching (DRIE)-based process flow utilizing silicon-on-insulator (SOI) wafers. The accelerometer consists of a 1.2 mg seismic mass, supported by four 8 mum thick spokes. The charge sensitivity in the vertical direction is 22 pC/g and in the parallel direction 8 pC/g.

Place, publisher, year, edition, pages
2001. Vol. 92, no 03-jan, 156-160 p.
Keyword [en]
triaxial, accelerometer, piezoelectric, thin film
Identifiers
URN: urn:nbn:se:kth:diva-20835DOI: 10.1016/S0924-4247(01)00555-6ISI: 000170148500024OAI: oai:DiVA.org:kth-20835DiVA: diva2:339532
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Stemme, Göran

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