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Dopant diffusion and current-voltage studies on epitaxial InP codoped with Ru and Fe
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
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2001 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 30, no 8, 972-976 p.Article in journal (Refereed) Published
Abstract [en]

Semi-insulating Fe and Ru codoped InP epitaxial layers grown by low-pressure hydride vapor phase epitaxy have been investigated. InP:Ru and InP:Fe,Ru layers were grown on p-InP:Zn and n-InP:S substrates, in order to study dopant diffusion and electrical characteristics. Dopant diffusion profiles of Ru, Fe and Zn were measured by secondary ion mass spectroscopy. A small but noteworthy diffusion front is observed when InP:Ru is adjacent to InP:Zn, but not when adjacent to n-InP. For InP:Fe codoped with Ru a pronounced interdiffusion of Fe and Zn is observed for Ru concentrations less than 2 X 10(17) cm(-3), but, for a higher Ru concentration the interdiffusion is clearly suppressed. Moreover, when InP is codoped with Fe and Ru, the small diffusion tail of Ru in InP:Zn vanishes. Unlike InP:Fe, resistivities above 1 X 10(8) Ohm cm are measured for both electron and hole-current injection in InP:Fe,Ru.

Place, publisher, year, edition, pages
2001. Vol. 30, no 8, 972-976 p.
Keyword [en]
InP : Fe, Ru, dopant diffusion, low-pressure hydride VPE, chemical-vapor-deposition, phase epitaxy, iron, layers, zn
Identifiers
URN: urn:nbn:se:kth:diva-20870ISI: 000170458500011OAI: oai:DiVA.org:kth-20870DiVA: diva2:339567
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Lourdudoss, Sebastian

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