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Epitaxially regrown GaAs/AlGaAs laser mesas with semi-insulating GaInP: Fe and GaAs : Fe
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2001 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 30, no 8, 987-991 p.Article in journal (Refereed) Published
Abstract [en]

Selective regrowth of semi-insulating iron-doped Ga0.51In0.49P (SI-GaInP:Fe) and SI-GaAs:Fe around GaAs/AlGaAs mesas by hydride vapor phase epitaxy (HVPE) has been achieved. A HCl based in-situ cleaning procedure has been used to remove aluminum oxide from the etched walls of the mesas. Regrowth conducted without proper cleaning results in an irregular interface with voids. Regrowth morphology aspects are also presented. Our cleaning and regrowth methods have been used for fabricating GaAs/AlGaAs buried heterostructure in-plane lasers and vertical-cavity surface-emitting lasers.

Place, publisher, year, edition, pages
2001. Vol. 30, no 8, 987-991 p.
Keyword [en]
semi-insulating materials, hydride vapor phase epitaxy, semiconductor lasers, buried-heterostructure lasers, inp-fe, mocvd
URN: urn:nbn:se:kth:diva-20871ISI: 000170458500014OAI: diva2:339568
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Lourdudoss, Sebastian
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Microelectronics and Information Technology, IMIT
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