Change search
ReferencesLink to record
Permanent link

Direct link
Electrical properties of the TiSi2-Si transition region in contacts: The influence of an interposed layer of Nb
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-6705-1660
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
Show others and affiliations
2001 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 90, no 5, 2380-2388 p.Article in journal (Refereed) Published
Abstract [en]

The influence of an interposed ultrathin Nb layer between Ti and Si on the silicide formation and the electrical contact between the silicide formed and the Si substrate is investigated. The presence of the Nb interlayer results in the formation of ternary alloy (Nb,Ti)Si-2 in the C40 crystallographic structure adjacent to the Si substrate. Depending on the nature of the Si substrates and/or the amount of the initial Nb, the interfacial C40 (Nb,Ti)Si-2 leads, in turn, to either epitaxial growth of a highly faulted metastable C40 TiSi2 or formation of the desired C54 TiSi2 at a lower temperature than needed for it to form in reference samples with Ti deposited directly on Si. On p-type substrates doped to various concentrations, the Nb also leads to a considerably lower specific contact resistivity than that obtained in the reference samples: a twofold to fourfold reduction in the contact resistivity is found using cross-bridge Kelvin structures in combination with two-dimensional numerical simulation. As C40 (Nb,Ti)Si-2 forms at the interface when an interfacial Nb is present, the interface characterized is likely to represent the one between (Nb,Ti)Si-2 and Si. For the reference samples, the interface studied is between TiSi2 and Si.

Place, publisher, year, edition, pages
2001. Vol. 90, no 5, 2380-2388 p.
Keyword [en]
c54 phase, enhanced formation, silicon, transformation, temperature, resistivity, films, molybdenum, activation, resistance
URN: urn:nbn:se:kth:diva-20895ISI: 000170593900042OAI: diva2:339592
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

Open Access in DiVA

No full text

Search in DiVA

By author/editor
Hellberg, Per-ErikZhang, Shi-Li
By organisation
Microelectronics and Information Technology, IMIT
In the same journal
Journal of Applied Physics

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Total: 62 hits
ReferencesLink to record
Permanent link

Direct link