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Velocity-modulation and transit-time effects in InP/InGaAs HBTs
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 22, no 9, 417-419 p.Article in journal (Refereed) Published
Abstract [en]

The base-collector capacitance C-bc and the collector transit time delay tau

Place, publisher, year, edition, pages
2001. Vol. 22, no 9, 417-419 p.
Keyword [en]
cutoff frequency, HBT, InP, maximum oscillation frequency, velocity modulation, bipolar-transistors, collector, overshoot, delay
Identifiers
URN: urn:nbn:se:kth:diva-20913ISI: 000170716300001OAI: oai:DiVA.org:kth-20913DiVA: diva2:339610
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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