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Formation of three-dimensional microstructures by electrochemical etching of silicon
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5260-5322
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 11, 1727-1729 p.Article in journal (Refereed) Published
Abstract [en]

This letter describes the promising technique of micromachining using the properties of electrochemical etching of (100)-oriented n-type silicon in a hydrofluoric acid electrolyte. The technique is based on electropolishing of a wafer except for areas where vertical structures are needed and does not require a periodic pattern. Predefined steps of a few microns depth prior to the electrochemical etching define the shape and position of the structures. The three-dimensional microstructure width can be adjusted with the etching parameters, also enabling the formation of free-standing structures. The feasibility of this technique is demonstrated by forming high aspect ratio microneedles and tubes.

Place, publisher, year, edition, pages
2001. Vol. 79, no 11, 1727-1729 p.
Keyword [en]
n-type silicon, porous silicon, fabrication
Identifiers
URN: urn:nbn:se:kth:diva-20920ISI: 000170800700048OAI: oai:DiVA.org:kth-20920DiVA: diva2:339617
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnros, Jan

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