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Temperature dependence of the quantum efficiency of 4H-SiC-Based Schottky photodiodes
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2001 (English)In: Technical physics letters, ISSN 1063-7850, E-ISSN 1090-6533, Vol. 27, no 9, 776-778 p.Article in journal (Refereed) Published
Abstract [en]

Using metal-semiconductor structures based on a pure epitaxial layer of n-4H-SiC (N-d - N-a = 4 x 10(15) cm(-3)), UV photodetectors were created with a maximum photosensitivity at 4.9 eV and a quantum efficiency up to 0.3 el/ph. The photosensitivity spectrum of the base structure is close to the spectrum of bactericidal action of the UV radiation. For photon energies in the 3.4 - 4.7 eV range, the quantum efficiency of the photoelectric conversion exhibits rapid growth with the temperature above 300 K, which is explained by the participation of photons in indirect interband transitions. This growth is not manifested when the photon energy is close to the threshold energy of direct optical transitions in the nondirect-bandgap semiconductor, which allows the threshold energy to be evaluated (similar to4.9 eV).

Place, publisher, year, edition, pages
2001. Vol. 27, no 9, 776-778 p.
Keyword [en]
silicon-carbide, diode
Identifiers
URN: urn:nbn:se:kth:diva-20940ISI: 000170990500022OAI: oai:DiVA.org:kth-20940DiVA: diva2:339637
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Hallén, Anders.

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