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Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0977-2598
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 12, 1885-1887 p.Article in journal (Refereed) Published
Abstract [en]

The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.

Place, publisher, year, edition, pages
2001. Vol. 79, no 12, 1885-1887 p.
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URN: urn:nbn:se:kth:diva-20942ISI: 000171014800048OAI: oai:DiVA.org:kth-20942DiVA: diva2:339639
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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Lourdudoss, Sebastian

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