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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-0292-224X
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2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 13, 2016-2018 p.Article in journal (Refereed) Published
Abstract [en]

Heavily Al-doped 4H-SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 degreesC and 2000 degreesC for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy (TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of similar to 2x10(20) Al/cm(3) (1900 degreesC) is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700 degreesC or above when the Al concentration exceeds 2x10(20) cm(-3). Al-containing precipitates are identified by energy-filtered TEM.

Place, publisher, year, edition, pages
2001. Vol. 79, no 13, 2016-2018 p.
Keyword [en]
silicon-carbide, chemical interaction, phase-equilibria, si-c, aluminum, system
URN: urn:nbn:se:kth:diva-20943ISI: 000171015200029OAI: diva2:339640
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Linnarsson, Margareta K.
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