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Ag(Ta, Nb)O-3 thin-film low-loss variable interdigital capacitors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 14, 2234-2236 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial silver tantalate-niobate Ag(Ta, Nb)O-3 (ATN) films have been grown on LaAlO3(001) MgO(001), and Al2O3(011_2) single crystals by pulsed ablation of stoichiometric AgTa0.38Nb0.62O3 ceramic target. Rutherford backscattering spectroscopy has revealed Ag0.9Ta0.42Nb0.58O3-delta composition of fabricated films. Micrometer size interdigital capacitor structures have been defined photolithographically on the top surface of ATN films. ATN/LaAlO3 thin-film capacitors exhibit superior overall performance: loss tangent as low as 0.0033 @1 MHz, dielectric permittivity 224 @1 kHz, weak frequency dispersion of 5.8% in 1 kHz to 1 MHz range, tunability as high as 16.8%, factor K=tunability/tan delta higher than 48, and leakage current as low as 230 nA/cm2 @100 kV/cm. ATN films on MgO show the lowest loss factor of 0.0025 @1 MHz and the weakest frequency dispersion of 2.5x10(-8) Hz(-1).

Place, publisher, year, edition, pages
2001. Vol. 79, no 14, 2234-2236 p.
Keyword [en]
URN: urn:nbn:se:kth:diva-20954ISI: 000171134900037OAI: diva2:339651
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Grishin, Alexander M.
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