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Rapid carrier relaxation by phonon emission in In0.6Ga0.4As/GaAs quantum dots
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-4606-4865
2001 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 6411, no 11Article in journal (Refereed) Published
Abstract [en]

Carrier transfer into quantum dots has been investigated by time-resolved photoluminescence spectroscopy in a set of In0.6Ga0.4As/GaAs quantum dot structures with gradually changing interband transition and intraband level energies. Quantum dot energy levels were tuned by thermal compositional disordering of the inter-face. Time-resolved photoluminescence for low photoexcited carrier densities show efficient electron relaxation by LO phonon emission for samples in which the electron energy level separation is close to the LO phonon energy. Slower carrier transfer in samples with abrupt quantum dot/barrier interfaces is also found, the latter is attributed to strain-induced or compositional potential barriers at the quantum dot inter-face.

Place, publisher, year, edition, pages
2001. Vol. 6411, no 11
Keyword [en]
electronic-structure, energy relaxation, optical phonons, auger processes, excited-states, hot carriers, capture, gaas, mechanism, ensemble
Identifiers
URN: urn:nbn:se:kth:diva-20958ISI: 000171136700071OAI: oai:DiVA.org:kth-20958DiVA: diva2:339655
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Marcinkevicius, Saulius

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