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Effects of growth kinetics and surface emissivity on chemical vapor deposition of silicon in a lamp-heated single-wafer reactor
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
2001 (English)In: Electrochemical and solid-state letters, ISSN 1099-0062, E-ISSN 1944-8775, Vol. 4, no 11, G98-G100 p.Article in journal (Refereed) Published
Abstract [en]

Chemical vapor deposition of Si in a lamp-heated single-wafer reactor is studied by monitoring the growth rate of films deposited on bare S. silicon-on-insulator (SOI), and oxidized Si wafers. The growth rate is consistently higher for deposition of polycrystalline Si than for epitaxy of Si. due to different kinetics dictating the two depositions. Epitaxy of Si on SOI shows a higher overall growth rate than on hare Si. Likewise, deposition of polycrystalline Si on oxidized Si wafer with a 4000 Angstrom thick oxide has a higher growth rate than on that with 15 Angstrom oxide. These are attributed to surface emissivity variation during Si deposition. The difference in kinetics plays a more dominant role than the surface emissivity variation in affecting the growth rate for the depositions studied.

Place, publisher, year, edition, pages
2001. Vol. 4, no 11, G98-G100 p.
Keyword [en]
polycrystalline silicon, temperature control, pressure, silane, sih4
Identifiers
URN: urn:nbn:se:kth:diva-21006ISI: 000171501700015OAI: oai:DiVA.org:kth-21006DiVA: diva2:339703
Note
QC 20100525Available from: 2010-08-10 Created: 2010-08-10 Last updated: 2017-12-12Bibliographically approved

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