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Tunneling criteria for magnetic-insulator-magnetic structures
2001 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 79, no 19, 3104-3106 p.Article in journal (Refereed) Published
Abstract [en]

The bias and temperature dependent resistance and magnetoresistance of magnetic tunnel junctions with and without intentional shorts through the insulating barrier were studied. Based on the experimental results, a set of quality criteria was formulated that enables the identification of barrier shorts. While the temperature and bias dependencies of the junction resistance and of the fitted barrier parameters are very sensitive to the presence of such shorts, the same dependencies of the magnetoresistance are surprisingly insensitive. Finally, junctions with a shorted barrier exhibit a dramatic increase in noise level and junction instability.

Place, publisher, year, edition, pages
2001. Vol. 79, no 19, 3104-3106 p.
Keyword [en]
room-temperature, magnetoresistance, nanocontacts, junctions
URN: urn:nbn:se:kth:diva-21068ISI: 000171896600030OAI: diva2:339765
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Åkerman, Johan
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