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Influence of Si doping on optical properties of wurtzite GaN
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2001 (English)In: Journal of Physics: Condensed Matter, ISSN 0953-8984, E-ISSN 1361-648X, Vol. 13, no 40, 8891-8899 p.Article in journal (Refereed) Published
Abstract [en]

The band gap shift (BGS) of Si-doped wurtzite GaN for impurity concentrations spanning the insulating to the metallic regimes has been investigated at low temperature. The critical impurity concentration for the metal-non-metal transition is estimated from the generalized Drude approach for the resistivity to be about 1.0 x 10(18) cm(-3). The calculations for the BGS were carried out within a framework of the random phase approximation, taking into account the electron-electron, electron-optical phonon, and electron-ion interactions. In the wake of very recent photoluminescence measurements, we have shown and discussed the possible transitions involved in the experimental results.

Place, publisher, year, edition, pages
2001. Vol. 13, no 40, 8891-8899 p.
Keyword [en]
iii-v nitrides, doped gan, band, semiconductors, si-p,bi, shift, donor
URN: urn:nbn:se:kth:diva-21120ISI: 000172323000004OAI: diva2:339817
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Persson, ClasJohansson, Börje
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