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Vacancy-related defects in ion-beam and electron irradiated 6H-SiC
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2001 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 184, no 04-jan, 229-236 p.Article in journal (Refereed) Published
Abstract [en]

A brief review is given on EPR study of irradiation-induced defects in SiC. The results of low-temperature study of Ky1 and Ky2 centers reveal for both of them the C-S symmetry, spin S = 1/2 and close coincidence of the g-tensor components. For Ky2 defect the principal values of g-tensor have been determined as g(z) = 2.0048, g(x) = 2.0022 and g(y) = 2.0037, where z and x directions reside in the (11 (2) over bar0) plane and the z-axis makes up an angle 65 degrees with the c-axis. The same residence of z- and x-axis and an angle 59 degrees are found for Ky1 center, g(z) = 2.0058, g(x) = 2.0025 and g(y) = 2.0023. A comparison of experimental and calculated hyperfine (HF) parameters is presented which suggests that Ky2 and Ky1 defects can be assigned to the positively charged carbon vacancy in 6H-SiC. The EPR study of defects created along the Al+ ion track in n-type 6H-SiC shows that lineshape, linewidth and integral intensity of the EPR signal reflect the state of damaged layer generated by ion implantation. A variation of defect density with annealing is reported and defect origin is discussed.

Place, publisher, year, edition, pages
2001. Vol. 184, no 04-jan, 229-236 p.
Keyword [en]
EPR, SiC, intrinsic defects, carbon vacancy, ion implantation, electron irradiation, radiation-induced defects, 6h silicon-carbide, spin-resonance, magnetic-resonance, sic polytypes, implantation, energy, damage, positron, centers
URN: urn:nbn:se:kth:diva-21208ISI: 000173000100039OAI: diva2:339905
QC 20100525Available from: 2010-08-10 Created: 2010-08-10Bibliographically approved

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Hallén, Anders.
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Microelectronics and Information Technology, IMIT
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